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MT4C4M4B1TG Просмотр технического описания (PDF) - Micron Technology
Номер в каталоге
Компоненты Описание
производитель
MT4C4M4B1TG
4 MEG x 4 FPM DRAM
Micron Technology
MT4C4M4B1TG Datasheet PDF : 20 Pages
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RAS#
V
V
IH
IL
CAS#
V
V
IH
IL
ADDR
V
V
IH
IL
WE#
V
IH
V
IL
DQ
V
IOH
V
IOL
tCRP
tASR
tRAD
tRAH
ROW
EARLY WRITE CYCLE
tRC
tRAS
tRCD
tCSH
tRSH
tCAS
tAR
tASC
tCAH
tWCS
COLUMN
tCWL
tRWL
tWCR
tWCH
tWP
tDS
tDH
VALID DATA
4 MEG x 4
FPM DRAM
tRP
ROW
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL
t
AR
t
ASC
t
ASR
t
CAH
t
CAS
t
CRP
t
CSH
t
CWL
t
DH
t
DS
t
RAD
-5
MIN
MAX
38
0
0
8
8
10,000
5
38
8
8
0
9
MIN
45
0
0
10
10
5
45
10
10
0
12
-6
MAX
10,000
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
t
RAH
t
RAS
t
RC
t
RCD
t
RP
t
RSH
t
RWL
t
WCH
t
WCR
t
WCS
t
WP
-5
MIN
MAX
9
50
10,000
84
11
30
13
13
8
38
0
5
MIN
10
60
104
14
40
15
15
10
45
0
5
-6
MAX
10,000
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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