MRF18030BSR3 Просмотр технического описания (PDF) - Motorola => Freescale

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MRF18030BSR3

RF Power Field Effect Transistors

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 20 µAdc)

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 100 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 250 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 1 Adc)

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

FUNCTIONAL TESTS (In Motorola Test Fixture) (2)

Output Power, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)

Common–Source Amplifier Power Gain @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)

Drain Efficiency @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)

Input Return Loss @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)

Output Mismatch Stress @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 – 1990 MHz,

VSWR = 5:1, All Phase Angles at Frequency of Tests)

V(BR)DSS

65

—

—

Vdc

IDSS

—

—

1

µAdc

IGSS

—

—

1

µAdc

VGS(th)

2

3

4

Vdc

VGS(Q)

2

3.9

4.5

Vdc

VDS(on)

—

0.29

0.4

Vdc

gfs

—

2

—

S

Crss

—

1.3

—

pF

P1dB

Gps

η

IRL

Ψ

27

30

13

14

46.5

50

—

–12

—

Watts

—

dB

—

%

–9

dB

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

(2) Device specifications obtained on a Production Test Fixture.

MRF18030BR3 MRF18030BSR3

2

MOTOROLA RF DEVICE DATA

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