MRF160 Просмотр технического описания (PDF) - Advanced Semiconductor
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MRF160 Datasheet PDF : 1 Pages
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MRF160
POWE FIELD EFFECT TRANSISTOR
DESCRIPTION:
The MRF160 is an Enhancement-
Mode N-Channel TMOS designed for
wideband large-signal amplifier and
oscillator applications to 500 MHz.
MAXIMUM RATINGS
ID
0.5 mA
VDSS
65 V
VGS
±40 V
PDISS
8.0 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
13.2 °C/W
PACKAGE STYLE .280 4L PILL
Style 3
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V(BR)DSS
ID = 5.0 mA
VGS = 0 V
IDSS
VDSS = 28 V
VGS = 0 V
IGSS
VGS = 40 V
VDS = 0 V
VGS(th)
VDS = 10 V
ID = 10 mA
gfs
VDS = 10 V
ID = 100 mA
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
NF
VDS = 28 V
ID = 100 mA f = 400 MHz
ZS = 67.7+j = 14.1 ZL = 14.5+j = 25.7
Gps
η
VDD = 28 V
Pout = 2.0 W
IDQ = 100 mA f = 400 MHz
MINIMUM
65
1.0
50
16
45
TYPICAL
3.0
4.2
0.45
3.0
NONE
MAXIMUM UNITS
V
0.5
mA
1.0
µA
6.0
V
mmhos
pF
dB
20
dB
55
%
ψ
VDD = 28 V
IDQ = 100 mA Pout = 2.0 W
VSWR = 30:1 at all phase angles f = 400 MHz
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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