MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver from
30–500 MHz.
• Typical Performance at 400 MHz, 28 Vdc
Output Power = 4.0 Watts
Gain = 17 dB
Efficiency = 50%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 Volts
Order this document
by MRF160/D
MRF160
4.0 W, to 400 MHz
MOSFET BROADBAND
RF POWER FET
CASE 249–06, STYLE 3
D
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Gate Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current–Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
VDSS
VDGR
VGS
ID
PD
65
Vdc
65
Vdc
± 40
Vdc
1.0
ADC
24
Watts
0.14
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Thermal Resistance — Junction to Case
RθJC
7.2
°C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF160
1