MMBF170 Просмотр технического описания (PDF) - Diodes Incorporated.
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MMBF170 Datasheet PDF : 5 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0MΩ
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
Value
60
60
20
40
500
800
MMBF170
Units
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
Value
300
1.80
417
-55 to +150
Units
mW
mW/°C
K/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
60
70
V VGS = 0V, ID = 100μA
IDSS
1.0 µA VDS = 60V, VGS = 0V
IGSS
10 nA VGS = 15V, VDS = 0V
VGS(th) 0.8 2.1 3.0
V VDS = VGS, ID = 250μA
RDS (ON)
5.0
5.3
Ω
VGS = 10V, ID = 200mA
VGS = 4.5V, ID = 50mA
gFS
80 mS VDS =10V, ID = 0.2A
Ciss
Coss
Crss
22 40 pF
11 30 pF VDS = 10V, VGS = 0V, f = 1.0MHz
2.0 5.0 pF
ton
10 ns VDD = 25V, ID = 0.5A,
toff
10
ns VGS = 10V, RGEN = 50Ω
Notes:
5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
MMBF170
Document number: DS30104 Rev. 14 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated
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