MOC8050SR2VM Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

MOC8050SR2VM

Photodarlington Optocoupler (No Base Connection)

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C Unless otherwise specified.)

Individual Component Characteristics

Symbol

Parameter

Test Conditions

EMITTER

VF Input Forward Voltage

IR

Reverse Leakage Current

DETECTOR

IF = 10mA

VR = 3.0V

BVCEO

Collector-Emitter Breakdown Voltage

MOC8021M

MOC8050M

IC = 1.0mA, IF = 0

BVECO

ICEO

CCE

Emitter-Collector Breakdown Voltage

Collector-Emitter Dark Current

Capacitance

IE = 100µA, IF = 0

VCE = 60V, IF = 0

VCE = 0V, f = 1MHz

Min.

50

80

5

Typ.*

1.18

0.001

100

100

10

8

Max.

2.00

10

1

Unit

V

µA

V

V

µA

pF

Transfer Characteristics

Symbol

Parameter

Test Conditions

DC CHARACTERISTICS

CTR

Current Transfer Ratio,

Collector to Emitter

MOC8021M

MOC8050M

AC CHARACTERISTICS

IF = 10mA, VCE = 5V

IF = 10mA, VCE = 1.5V

ton

Non-Saturated Turn-on Time IF = 5mA, VCC = 10V,

RL = 100Ω

toff

Turn-off Time

IF = 5mA, VCC = 10V,

RL = 100Ω

Min. Typ.* Max. Unit

1,000

%

500

8.5

µs

95

µs

Isolation Characteristics

Symbol

Characteristic

VISO

RISO

CISO

Input-Output Isolation Voltage

Isolation Resistance

Isolation Capacitance

Note:

*Typical values at TA = 25°C

Test Conditions

f = 60Hz, t = 1 sec.

VI-O = 500VDC

VI-O = Ø, f = 1MHz

Min.

7500

1011

Typ.

0.2

Max.

2

Units

Vac(pk)

Ω

pF

©2000 Fairchild Semiconductor Corporation

MOC8021M, MOC8050M Rev. 1.0.3

3

www.fairchildsemi.com

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