MJ15003G Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MJ15003G Datasheet PDF : 4 Pages
| |||
MJ15003 (NPN), MJ15004 (PNP)
TYPICAL CHARACTERISTICS MJ15003G (NPN)
1.6
1.4 IC/IB = 10
1.2
1.0
−55°C
0.8
0.6 25°C
0.4 150°C
0.2
0
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage
100
10
1
0.1
1
1.0 Sec
100 mSec
10
100
1,000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 4. Safe Operating Area
TYPICAL CHARACTERISTICS MJ15004G (PNP)
1,000
150°C
100
−55°C
25°C
10
VCE = 2 V
1
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain
1.0
0.9
IC/IB = 10
0.8
0.7
150°C
0.6
−55°C
0.5
25°C
0.4
0.3
0.2
0.1
0
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 6. Collector−Emitter Saturation Voltage
1.4
1.2
IC/IB = 10
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. Base−Emitter Saturation Voltage
100
10
1
0.1
1
1.0 Sec
100 mSec
10
100
1,000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
http://onsemi.com
3
Share Link: 