DSEC16-06AC(2012) Просмотр технического описания (PDF) - IXYS CORPORATION
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DSEC16-06AC Datasheet PDF : 5 Pages
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DSEC16-06AC
Fast Diode
30
25
20
IF
15
[A]
10
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
5
1.4
1.2 TVJ = 100°C
VR = 300 V
1.0
0.8
Qr
0.6
[μC]
0.4
IF = 20 A
IF = 10 A
IF = 5 A
0.2
40
30
IRM
20
[A]
TVJ = 100°C
VR = 300 V
IF = 20 A
IF = 10 A
IF = 5 A
10
0
0.0 0.5 1.0 1.5 2.0 2.5
VF [V]
Fig. 1 Forward current
IF versus VF
0.0
100
1000
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0
1.5
Kf 1.0
IRM
0.5
120
110
100
trr
90
[ns]
80
TVJ = 100°C
VR = 300 V
IF = 20 A
IF = 10 A
IF = 5 A
0.0
0
Qr
40
80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
70
0 200 400 600 800
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1000
20
1.2
TVJ = 100°C
IF = 10 A
15
0.9
VFR
10
[V]
5
VFR
tfr
0.6
[μs]
0.3
trr
0
0.0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
10
1
ZthJC
0.1
[K/W]
0.01
Constants for ZthJC calculation:
i
Rthi [K/W]
ti [s]
1
1.449
0.0052
2
0.5578
0.0003
3
0.4931
0.0169
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120705b
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