MCT1413, B
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.)
Characteristic
Output Leakage Current
(VO = 50 V)
(VO = 50 V, TA = + 85°C)
(VO = 50 V, TA = – 40°C)
Collector–Emitter Saturation Voltage
(IC = 350 mA, IB = 500 µA)
(IC = 200 mA, IB = 350 µA)
(IC = 100 mA, IB = 250 µA)
(IC = 350 mA, IB = 500 µA, TA = + 85°C, – 40°C)
(IC = 200 mA, IB = 350 µA, TA = + 85°C, – 40°C)
(IC = 100 mA, IB = 250 µA, TA = + 85°C, – 40°C)
Input Current – ON Condition
(Vin = 3.85 V)
MCT1413, B
MCT1413, B
MCT1413B
MCT1413, B
MCT1413, B
MCT1413, B
MCT1413B
MCT1413B
MCT1413B
MCT1413, B
Output Voltage – ON Condition
(Vin = 2.4 V, IC = 200 mA)
(Vin = 2.7 V, IC = 250 mA)
(Vin = 3.0 V, IC = 300 mA)
(Vin = 2.7 V, IC = 250 mA, TA = + 85°C, – 40°C)
(Vin = 3.0 V, IC = 300 mA, TA = + 85°C, – 40°C)
MCT1413, B
MCT1413, B
MCT1413, B
MCT1413B
MCT1413B
Output Current – OFF Condition
(Iin = 50 µA, Vout = 5.0 V)
(Iin = 50 µA, Vout = 5.0 V, TA = + 85°C)
(Iin = 50 µA, Vout = 5.0 V, TA = – 40°C)
Clamp Diode Leakage Current
(VR = 50 V)
(VR = 50 V, TA = + 85°C)
(VR = 50 V, TA = – 40°C)
Clamp Diode Forward Voltage
(IF = 350 mA)
(IF = 350 mA, TA = + 85°C, – 40°C)
MCT1413, B
MCT1413, B
MCT1413B
MCT1413, B
MCT1413, B
MCT1413B
MCT1413, B
MCT1413B
Symbol
ICEX
VCE(sat)
Iin
Vout
Iout
IR
VF
Min
Typ
Max Unit
µA
–
–
50
–
–
100
–
–
100
V
–
1.1
1.6
–
0.95
1.3
–
0.85
1.1
–
–
1.75
–
–
1.5
–
–
1.3
mA
–
0.93 1.35
V
–
–
2.0
–
–
2.0
–
–
2.0
–
–
2.0
–
–
2.0
µA
–
–
100
–
–
500
–
–
500
µA
–
–
50
–
–
100
–
–
100
V
–
1.5
2.0
–
–
2.0
Figure 1. Representative Schematic Diagram
(1/7 MCT1413, B)
2.7 k
7.2 k
3.0 k
NOTE: Dotted lines indicate parasitic diodes.
This device contains 14 active transistors.
Pin 9
2
MOTOROLA ANALOG IC DEVICE DATA