AO3406 Просмотр технического описания (PDF) - Unspecified

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AO3406

N-Channel 30-V (D-S) MOSFET

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AFnreaelsocgaPleower

N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

•

Low rDS(on) provides higher efficiency and

extends battery life

• Low thermal impedance copper leadframe

SOT-23 saves board space

• Fast switching speed

• High performance trench technology

AO34A06M/ 2M3C2324N06

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

30

0.085 @ VGS = 10V

0.125 @ VGS = 4.5V

ID (A)

2.5

1.7

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)

Parameter

Symbol Maximum

Drain-Source Voltage

VDS

30

Gate-Source Voltage

Continuous Drain Currenta

Pulsed Drain Currentb

VGS

±20

TA=25oC

TA=70oC

ID

2.5

2

IDM

10

Continuous Source Current (Diode Conduction)a

IS

0.46

Power Dissipationa

TA=25oC

TA=70oC

PD

1.25

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg -55 to 150

Units

V

A

A

W

oC

THERMAL RESISTANCE RATINGS

Parame te r

Maximum Junction-to-Ambienta

t <= 5 sec

Steady-State

Symbol

R T HJA

Maximum

150

200

Units

o C/W

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

1

www.freescale.net.cn

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