MC33567D-2 Просмотр технического описания (PDF) - ON Semiconductor
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MC33567D-2 Datasheet PDF : 8 Pages
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MC33567
MAXIMUM RATINGS
Parameter
Supply Voltage
Operating Ambient Temperature
Operating Junction Temperature
Lead Temperature (Soldering, 10 seconds)
Storage Temperature Range
Package Thermal Resistance, Junction to Ambient
DEVICE MARKING
Device
MC33567–1
MC33567–2
Type
1.818 V, 1.515 V
2.525 V, 2.525 V
Symbol
Vcc
Ta
TJ
TL
Tstg
RθJA1
Package
SO–8
SO–8
Max Value
12.5
0 to +80
– 5 to +125
300
– 55 to +150
180
Unit
Vdc
°C
°C
°C
°C
°C/W
Marking (1st Line)
M5671
M5672
PIN ASSIGNMENTS AND FUNCTIONS
PIN #
PIN NAME
PIN DESCRIPTION
1
Gate 1 drive
Drives mosfet in linear region. Is internally clamped to ground in power down mode.
2
Sense 1 line
Returns regulated output from mosfet.
3
Shutoff 1
At TTL high level turns off regulation for gate 1. Effectively grounds gate 1. (Internal pullup to 3.3V)
4
Ground
5
Shutoff 2
At TTL high level turns off regulation for gate 2. Effectively grounds gate 2. (Internal pullup to 3.3V)
6
Sense 2 line
Returns regulated output from mosfet.
7
Gate 2 drive
Drives mosfet in linear region. Is internally clamped to ground in power down mode.
8
12 volt input
Supply voltage for operation and gate drive output.
ELECTRICAL CHARACTERISTICS
Characteristic
Output Voltage Regulation (Full–load to no–load @ 25 – 70°C)
Peak Gate Drive Output (pin 1, pin 7)
Drive Sink Current (steady state)
Short Circuit / Undervoltage Detect
(load current increased until output drops)
Quiescent Current
Under Voltage Lock Out
Hysteresis
Shutoff Threshold (Lower)
Shutoff Hysteresis
Short Circuit Response Time
Short Circuit Off Time
Short Circuit On Time
Shutoff Disable Time
Symbol
Min
Typ
Max
Unit
Vreg%
–2.5
—
+2.5
%
Ipkdrv
10
20
30
mA
Isink
5.0
7.0
10
mA
ss/uvd
70
—
80
% Vo
Iq
—
UVLO
7.0
hys
0.2
SHDN
0.8
SHDNhys
—
SCtd
—
SCtoff
20
SCton
0.5
SHDNtdis
—
7
10
mA
8.5
9.0
V
0.5
0.9
V
1.13
1.29
V
130
—
mV
250
—
mS
40
60
mS
0.8
1.5
mS
0.5
2.0
µS
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