MC33035DWR2 Просмотр технического описания (PDF) - ON Semiconductor
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MC33035DWR2 Datasheet PDF : 28 Pages
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MC33035, NCV33035
D SENSEFET
21
G
S
MK
20
19
9
15 RS
100 mV
16 Gnd
Power Ground:
To Input Source Return
VPin
9
[
RS @ Ipk @
rDM(on)
RDS(on)
) RS
If: SENSEFET = MPT10N10M
RS = 200 Ω, 1/4 W
Then : VPin 9 ≈ 0.75 Ipk
Control Circuitry Ground (Pin 16) and Current Sense Inverting Input (Pin 15)
must return on separate paths to the Central Input Source Ground.
Virtually lossless current sensing can be achieved with the implementation of
SENSEFET power switches.
Figure 29. Current Sensing Power MOSFETs
VCC = 12 V
8
4
6
R
5
Q
S
2
1 MC1555
0.001
18 k
VM + 12
VM + 8.0
7
VM + 4.0 0
20 40 60
Boost Current (mA)
3
1.0/200 V
*
VBoost
1N5352A * 22
* = MUR115
VM = 170 V
This circuit generates VBoost for Figure 25.
Figure 30. High Voltage Boost Supply
REF
8
7
VA R1
11
R2
R3
12
VB
R4
13
25 μA
EA
PWM
ǒ Ǔ ǒ Ǔ VPin 13 + VA
R3 ) R4
R1 ) R2
R2
R3
*
R4
R3
VB
Figure 31. Differential Input Speed Controller
8
Enable
7
R1
11
Increase
Speed
R2
12
C
13
REF
25 μA
EA
PWM
Resistor R1 with capacitor C sets the acceleration time constant while R2
controls the deceleration. The values of R1 and R2 should be at least ten
times greater than the speed set potentiometer to minimize time constant
variations with different speed settings.
Figure 32. Controlled Acceleration/Deceleration
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