MC1413BDR2 Просмотр технического описания (PDF) - ON Semiconductor

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MC1413BDR2

High Voltage, High Current Darlington Transistor Arrays

ON Semiconductor 

MC1413, MC1413B, NCV1413B

MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)

Rating

Symbol

Value

Unit

Output Voltage

Input Voltage

Collector Current − Continuous

Base Current − Continuous

Operating Ambient Temperature Range

MC1413

MC1413B

NCV1413B

VO

50

V

VI

30

V

IC

500

mA

IB

25

mA

TA

°C

−20 to +85

−40 to +85

−40 to +125

Storage Temperature Range

Junction Temperature

Thermal Resistance, Junction−to−Ambient

Case 648, P Suffix

Case 751B, D Suffix

Tstg

TJ

RqJA

−55 to +150

150

67

100

°C

°C

°C/W

Thermal Resistance, Junction−to−Case

Case 648, P Suffix

Case 751B, D Suffix

RqJC

°C/W

22

20

Electrostatic Discharge Sensitivity (ESD)

Human Body Model (HBM)

Machine Model (MM)

Charged Device Model (CDM)

ESD

V

2000

400

1500

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

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