MBRS1100T3 Просмотр технического описания (PDF) - ON Semiconductor
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MBRS1100T3 Datasheet PDF : 4 Pages
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MBRS1100T3, MBRS190T3
TYPICAL ELECTRICAL CHARACTERISTICS
20
10
5
TJ = 150°C
2
1
100°C
0.5
25°C
0.2
0.1
0.05
0.02
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1K
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ = 150°C
125°C
100°C
25°C
10 20 30 40 50 60 70 80
VR, REVERSE VOLTAGE (VOLTS)
90 100
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
3.2
2.0
2.8
TJ = 100°C
2.4
DC
1.5
2.0
SQUARE
1.6
WAVE
1.2
DC
1.0 SQUARE
WAVE
0.8
0.5
0.4
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
145 150 155
160
165
170
175 180
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Case, Per Leg
TYPICAL ELECTRICAL CHARACTERISTICS
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.1 0.2
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
50 100
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