TAK CHEONG ®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Figure 1. Forward Current Derating Curve (Per Diode)
10
8
6
4
Figure 2. Junction Capacitance (Per Diode)
1000.0
f = 1MHz
Ta = 25℃
100.0
MBRF10100CT MBRF10150CT
2
0
0
25
50
75
100
125
150
Tc - Case Tem perature [℃]
MBRF10200CT
10.0
0
5 10 15 20 25 30 35 40
Reverse Voltage [V]
Figure 3. MBRF10100CTTypical Reverse Current (Per Diode)
10000.000
1000.000
100.000
Ta= 150℃
Ta=125℃
10.000
1.000
Ta=75℃
0.100
0.010
0
Ta=25℃
10 20 30 40 50 60 70 80
VR - Reverse Voltage [V]
90 100
Figure 4. MBRF10150CTTypical Reverse Current (Per Diode)
1000.000
100.000
10.000
Ta= 150℃
Ta=125℃
1.000
0.100
Ta=75℃
0.010
0.001
0
Ta=25℃
15 30 45 60 75 90 105 120 135 150
VR - Reverse Voltage [V]
Figure 5. MBRF10200CTTypical Reverse Current (Per Diode)
1000.000
100.000
10.000
Ta= 150℃
Ta=125℃
1.000
0.100
Ta=75℃
0.010
0.001
Ta=25℃
0 10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage [V]
Figure 6. MBRF10100CT Typical Forward Voltage (Per Diode)
10
Ta=150℃
1
Ta=125℃
Ta=75
0.1
Ta=25℃
0.01
0
0.2
0.4
0.6
0.8
1
VF - Instantaneous Forward Voltage [V]
Number: DB-150
March 2010, Revision D
Page 2