MBR4045WTG Просмотр технического описания (PDF) - ON Semiconductor
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MBR4045WTG Datasheet PDF : 4 Pages
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MBR4045WT
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C) Per Diode
Per Device
VRRM
VRWM
VR
IF(AV)
45
V
A
20
40
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 90°C) Per Diode
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFRM
IFSM
40
A
400
A
Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature (Forward Current Applied)
IRRM
Tstg
TJ
TJ(pk)
2.0
A
−65 to +175
°C
−65 to +175
°C
175
°C
Voltage Rate of Change
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
RqJC
RqJA
Max
Unit
1.4
°C/W
50.1
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2)
@ IF = 20 Amps, TJ = 25°C
@ IF = 20 Amps, TJ = 125°C
@ IF = 40 Amps, TJ = 25°C
@ IF = 40 Amps, TJ = 125°C
VF
V
−
0.52
0.70
−
0.47
0.60
−
0.65
0.80
−
0.63
0.75
Instantaneous Reverse Current (Note 2)
IR
@ Rated DC Voltage, TJ = 25°C
@ Rated DC Voltage, TJ = 100°C
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
mA
−
0.09
1.0
−
7.5
50
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