MBRF2045CTG Просмотр технического описания (PDF) - ON Semiconductor
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MBRF2045CTG Datasheet PDF : 6 Pages
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MBR2045CTG, MBRF2045CTG
AYWW
MBR2045CTG
AKA
AYWW
B2045G
AKA
TO−220AB
TO−220 FULLPAK
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
Figure 1. Marking Diagrams
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
45
V
VRWM
VR
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)
IF(AV)
A
20
10
IFRM
20
A
Non−Repetitive Peak Surge Current
IFSM
150
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 13
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR2045CTG)
(MBRF2045CTG)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
Symbol
RqJC
RqJA
RqJC
RqJA
Value
2.0
60
4.75
75
Unit
°C/W
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