MBM29F080A Просмотр технического описания (PDF) - Spansion Inc.

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производитель

MBM29F080A

FLASH MEMORY CMOS 8M (1M ×8) BIT

Spansion Inc. 

MBM29F080A-55/-70/-90

(Continued)

Symbol

MBM29F080A

Description

-55

-70

-90

Unit

JEDEC Standard

Min Typ Max Min Typ Max Min Typ Max

RESET Pulse Width

—

tRP 500 — — 500 — — 500 — — ns

RESET Hold Time Before Read

—

tRH 50 — — 50 — — 50 — — ns

Program/Erase Valid to RY/BY Delay

—

tBUSY — — 55 — — 70 — — 90 ns

Delay Time from Embedded Output

Enable

—

tEOE — — 30 — — 30 — — 40 ns

*1 : This does not include the preprogramming time.

*2 : This timing is for Sector Protection operation.

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Limits

Min

Typ

Max

Sector Erase Time

—

1

8

Byte Programming Time

—

8

150

Chip Programming Time

—

8.4

20

Erase/Program Cycle

100,000

—

—

Unit

Comments

s

µs

s

cycle

Excludes 00h programming

prior to erasure

Excludes system-level

overhead

Excludes system-level

overhead

s TSOP(1) PIN CAPACITANCE

Parameter

Symbol

Input Capacitance

CIN

Output Capacitance

COUT

Control Pin Capacitance

CIN2

Note : Test conditions TA = +25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ

Max

Unit

8

10

pF

8

10

pF

9

10

pF

s SOP PIN CAPACITANCE

Parameter

Symbol

Test Setup

Input Capacitance

CIN

VIN = 0

Output Capacitance

COUT

VOUT = 0

Control Pin Capacitance

CIN2

VIN = 0

Notes : • Sampled, not 100% tested.

• Test conditions TA = +25°C, f = 1.0 MHz

Typ

Max

Unit

8

10.5

pF

8

10

pF

9.5

11

pF

25

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