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MAT02F

Low Noise, Matched Dual Monolithic Transistor

Analog Devices 

MAT02

ELECTRICAL CHARACTERISTICS (VCB = 15 V, –25؇C ≤ TA ≤ +85؇C, unless otherwise noted.)

Parameter

Symbol Conditions

MAT02E

Min Typ Max

MAT02F

Min Typ Max Unit

Offset Voltage

VOS

Average Offset

Voltage Drift

TCVOS

Input Offset Current

Input Offset

Current Drift

Input Bias Current

Current Gain

IOS

TCIOS

IB

hFE

Collector-Base

ICBO

Leakage Current

Collector-Emitter

ICES

Leakage Current

Collector-Collector ICC

Leakage Current

VCB = 0

1 µA ≤ IC ≤ 1 mA1

10 µA ≤ IC ≤ 1 mA, 0 ≤ VCB ≤ VMAX2

VOS Trimmed to Zero3

IC = 10 µA

IC = 10 µA4

IC = 10 µA

IC = 1 mA5

IC = 100 µA

IC = 10 µA

IC = 1 µA

VCB = VMAX

VCE = VMAX, VBE = 0

VCC = VMAX

70

220 µV

0.08 0.3

0.03 0.1

8

40 90

45

325

275

225

200

2

3

3

0.08 1

0.03 0.3

13

40 150

50

300

250

200

150

3

4

4

µV/°C

nA

pA/°C

nA

nA

nA

nA

NOTES

1Measured at IC = 10 µA and guaranteed by design over the specified range of IC.

2Guaranteed

by

VOS

test

(TCVOS ≅

VOS

T

for VOS Ӷ VBE) T = 298K for TA = 25°C.

3The initial zero offset voltage is established by adjusting the ratio of I C1 to IC2 at TA = 25°C. This ratio must be held to 0.003% over the entire temperature range.

Measurements are taken at the temperature extremes and 25°C.

4Guaranteed by design.

5Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 V to VMAX at the indicated collector current.

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS1

Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 40 V

Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 40 V

Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 40 V

Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . 40 V

Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

Total Power Dissipation

Case Temperature ≤ 40°C2 . . . . . . . . . . . . . . . . . . . . . 1.8 W

Ambient Temperature ≤ 70°C3 . . . . . . . . . . . . . . . . 500 mW

Operating Temperature Range

MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to +85°C

Operating Junction Temperature . . . . . . . . . . –55°C to +150°C

Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300°C

Junction Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C

NOTES

1Absolute maximum ratings apply to both DICE and packaged devices.

2Rating applies to applications using heat sinking to control case temperature.

Derate linearly at 16.4 mW/°C for case temperature above 40°C.

3Rating applies to applications not using a heat sinking; devices in free air only.

Derate linearly at 6.3 mW/°C for ambient temperature above 70°C.

Model

MAT02EH

MAT02FH

ORDERING GUIDE

VOS max

(TA = 25؇C)

50 µV

150 µV

Temperature

Range

–25°C to +85°C

–25°C to +85°C

Package

Option

TO-78

TO-78

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the MAT02 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

REV. E

–3–

WARNING!

ESD SENSITIVE DEVICE

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