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ES1A Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание
производитель
ES1A
Diodes
Diodes Incorporated. Diodes
ES1A Datasheet PDF : 5 Pages
1 2 3 4 5
ES1A - ES1G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 6)
RMS Reverse Voltage
Average Rectified Output Current
@ TT = +110C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
ES1A
50
35
ES1B
100
70
ES1C
150
105
1.0
30
ES1D
200
140
ES1G Unit
400
V
280
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance, Junction to Terminal (Note 5)
Operating and Storage Temperature Range
Symbol
RθJT
TJ, TSTG
Value
25
-55 to +150
Unit
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol ES1A
Minimum Reverse Breakdown Voltage (Note 6)
Maximum Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage (Note 6)
Maximum Reverse Recovery Time (Note 7)
Typical Total Capacitance (Note 8)
IR = 5µA
IF = 0.6A
IF = 1.0A
TA = +25C
TA = +125C
V(BR)R
50
VFM
IRM
tRR
CT
Notes:
5. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
8. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
ES1B ES1C
100
150
0.90
0.92
5.0
200
25
20
ES1D
200
ES1G Unit

V
1.25
V
µA
ns
pF
ES1A - ES1G
Document number: DS14001 Rev. 17 - 2
2 of 5
www.diodes.com
January 2015
© Diodes Incorporated

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