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LT3745EUJ Просмотр технического описания (PDF) - Linear Technology

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LT3745EUJ Datasheet PDF : 28 Pages
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LT3745
Applications Information
Inductor Selection
The critical parameters for selection of an inductor are
inductance value, DC or RMS current, saturation current,
and DCR resistance. For a given input and output voltage,
the inductor value and switching frequency will determine
the peak-to-peak ripple current, ∆IL. The ∆IL value usually
ranges from 20% to 50% of the maximum output load
current, IOUT(MAX). Lower values of ∆IL require larger and
more costly inductors; higher values of ∆IL increase the
peak currents and the inductor core loss. An inductor
current ripple of 30% to 40% offers a good compromise
between inductor performance and inductor size and cost.
However, for high duty cycle applications, a ∆IL value of
~20% should be used to prevent sub-harmonic oscillation
due to insufficient slope compensation.
The largest inductor ripple current occurs at the highest
VIN. To guarantee that the ripple current stays below the
specified maximum, the inductor value should be chosen
according to the following equation:
L VOUT + VD VIN(MAX) – VOUT
VIN(MAX) + VD
fSW I L
The inductor DC or RMS current rating must be greater
than the maximum output load current IOUT(MAX) and its
saturation current should be higher than the maximum
inductor current IL(MAX). To achieve high efficiency, the
DCR resistance should be less than 0.1Ω, and the core
material should be intended for high frequency applications.
Power MOSFET Selection
Important parameters for the external P-channel MOSFET
M1 include drain-to-source breakdown voltage (V(BR)DSS),
maximum continuous drain current (ID(MAX)), maximum
gate-to-source voltage (VGS(MAX)), total gate charge (QG),
drain-to-source on resistance (RDS(ON)), reverse transfer
capacitance (CRSS). The MOSFET V(BR)DSS specification
should exceed the maximum voltage across the source to
the drain of the MOSFET, which is VIN(MAX) plus VD. The
ID(MAX) should exceed the peak inductor current, IL(MAX).
Since the gate driver circuit is supplied by the internal
6.8V VIN referenced regulator, the VGS(MAX) rating should
be at least 10V.
Each switching cycle the MOSFET is switched off and on, a
packet of gate charge QG is transferred from the VIN pin to
the GATE pin, and then from the GATE pin to the CAP pin.
The resulting dQG/dt is a current that must be supplied to
the CCAP capacitor by the internal regulator. The maximum
22mA current capability of the internal regulator limits the
maximum QG(MAX) it can deliver to:
Q G(MAX)
=
22mA
fSW
Therefore, the QG at VGS = 6.8V from the MOSFET data
sheet should be less than QG(MAX).
For maximum efficiency, both RDS(ON) and CRSS should
be minimized. Lower RDS(ON) means less conduction loss
while lower CRSS reduces transition loss. Unfortunately,
RDS(ON) is inversely related to CRSS. Thus balancing the
conduction loss with the transition loss is a good criterion
in selecting a MOSFET. For applications with higher VIN
voltages (≥24V) a lower CRSS is more important than a
low RDS(ON).
Catch Diode Selection
The catch diode D1 carries load current during the switch
off-time. Important parameters for the catch diode includes
peak repetitive reverse voltage (VRRM), forward voltage
(VF), and maximum average forward current (IF(AV)). The
diode VRRM specification should exceed the maximum
reverse voltage across it, i.e., VIN(MAX). A fast switching
Schottky diode with lower VF should be used to yield lower
power loss and higher efficiency.
In continuous conduction mode, the average current
conducted by the catch diode is calculated as:
ID(AVG) = IOUT • (1 – D)
The worst-case condition for the diode is when VOUT is
shorted to ground with maximum VIN and maximum IOUT
at present. In this case, the diode must safely conduct
the maximum load current almost 100% of the time. To
improve efficiency and to provide adequate margin for
short circuit operation, a Schottky diode rated to at least
the maximum output current is recommended.
3745f
21

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