LM2902MTX Просмотр технического описания (PDF) - ROHM Semiconductor
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LM2902MTX Datasheet PDF : 18 Pages
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LM358MX,LM2904MX,LM324MX,LM324MTX,LM2902MX
●Derating curves
800
1000
800
600
LM358MX
LM2904MX
600
400
400
200
200
Technical Note
NOW SERIES LM2904/2902/358/324 family
LM324MTX
LM324MX
LM2902MX
0
70
85
0
25
50
75
100
AMBIENT TEMPERATURE [℃]
LM358MX, LM2904MX
0
70
85
0
25
50
75
100
AMBIENT TEMPERATURE [℃]
LM324MX/MTX, LM2902MX
Power Dissipation
Package
SO package8 (*8)
Pd[W]
450
θja [℃/W]
3.6
Power Dissipation
Package
SO package14
TSSOP14
Fig.102 Derating Curves
Pd[W]
610
870
θja [℃/W]
4.9
7.0
●Precautions
1) Unused circuits
When there are unused circuits, it is recommended that they be connected as in Fig.103,
setting the non-inverting input terminal to a potential within the in-phase input voltage range (VICR).
2) Input terminal voltage
Applying GND + 32V to the input terminal is possible without causing deterioration of the
electrical characteristics or destruction, irrespective of the supply voltage. However, this does not ensure
normal circuit operation.
Please note that the circuit operates normally only when the input voltage is within the common mode
input voltage range of the electric characteristics.
3) Power supply (single / dual)
The op-amp operates when the voltage supplied is between V+ and GND
Therefore, the single supply op-mp can be used as a dual supply op-amp as well.
V+
－
connect
＋
to V icm
GND
Fig.103 Disable circuit example
4) Power dissipation (Pd)
Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to the rise in chip temperature, including
reduced current capability. Therefore, please take into consideration the power dissipation (Pd) under actual operating conditions and apply a sufficient
margin in thermal design. Refer to the thermal derating curves for more information.
5) Short-circuit between pins and erroneous mounting
Incorrect mounting may damage the IC. In addition, the presence of foreign substances between the outputs, the output and the power supply, or the
output and GND may result in IC destruction.
6) Operation in a strong electromagnetic field
Operation in a strong electromagnetic field may cause malfunctions.
7) Radiation
This IC is not designed to withstand radiation.
8) IC handing
Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuation of the electrical characteristics due to piezoelectric (piezo)
effects.
9) IC operation
The output stage of the IC is configured using Class C push-pull circuits. Therefore, when the load resistor is connected to the middle potential of V+ and
GND, crossover distortion occurs at the changeover between discharging and charging of the output current. Connecting a resistor between the output
terminal and GND, and increasing the bias current for Class A operation will suppress crossover distortion.
10) Board inspection
Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every process is recommended. In
addition, when attaching and detaching the jig during the inspection phase, ensure that the power is turned OFF before inspection and removal.
Furthermore, please take measures against ESD in the assembly process as well as during transportation and storage.
11) Output capacitor
Discharge of the external output capacitor to V+ is possible via internal parasitic elements when V+ is shorted to GND, causing damage to the internal
circuitry due to thermal stress. Therefore, when using this IC in circuits where oscillation due to output capacitive load does not occur, such as in voltage
comparators, use an output capacitor with a capacitance less than 0.1μF.
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