KSC2331 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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KSC2331

TO-92L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

KSC2331 TRANSISTOR NPN

FEATURE

Power dissipation

PCM : 1

W Tamb=25

Collector current

ICM : 0.7

A

Collector-base voltage

V(BR)CBO : 80

V

Operating and storage junction temperature range

TJ Tstg: -55 to +150

TO-92L

1.EMITTER

2.COLLECTOR

3.BASE

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter

Symbol

Test conditions

MIN TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO Ic= 100 A IE=0

80

Collector-emitter breakdown voltage

V(BR)CEO IC= 10mA , IB=0

60

Emitter-base breakdown voltage

V(BR)EBO IE= 10 A IC=0

8

Collector cut-off current

ICBO

VCB=60V , IE=0

Emitter cut-off current

IEBO

VEB=5V , IC=0

DC current gain

hFE

VCE=2 V, IC= 50mA

40

Collector-emitter saturation voltage

VCE(sat)

IC= 500m A, IB= 50mA

Base-emitter voltage

VBE(sat)

IC= 500 mA, IB= 50mA

V

V

V

0.1

A

0.1

A

240

0.7

V

1.2

V

Collector output capacitance

Cob

(VCB=10V IE=0,f=1MHz)

8

pF

Transition frequency

fT

VCE= 10 V, IC= 50mA

30

MHz

CLASSIFICATION OF hFE(1)

Rank

Range

R

40-80

O

70-140

Y

120-240

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