KB2511B Просмотр технического описания (PDF) - Samsung

Номер в каталоге

Компоненты Описание

производитель

KB2511B

DEFLECTION PROCESSOR FOR MULTISYNC MONITORS

Samsung 

KB2511B

DEFLECTION PROCESSOR FOR MULTISYNC MONITORS

Table 10. Vertical Section Electrical Characteristics (Continued)

Parameter

Symbol

Conditions

Min Typ

VERTICAL MOIRE

Vertical moire (measured on VOUTDC) pin 23

VMOIRE Sub address 0C

Byte 01x11111

6

BREATHING COMPENSATION

DC breathing control range(15)

BRRANG V18

1

Vertical output variation versus DC breathing con- BRADj

V18≥VREF-V

0

trol (Pin 23)

V18=4V

-10

Max Unit

mV

12

V

%

%

B+ SECTION

OPERATING CONDITIONS

Parameter

Minimum feedback resistor

Table 11. B+ SectionOperating Conditions

Symbol

Conditions

Min

FeedRes Resistor between pins 15 and 14

5

Typ Max Unit

KΩ

ELECTRICAL CHARACTERISTICS

(VCC = 12V, Tamp = 25 °C )

Table 12. B+ Section Electrical Characteristics

Parameter

Symbol

Conditions

Min

Error amplifier open loop gain

OLG

At low frequency (10)

Unity gain band width

UGBW

see (7)

Regulation input bias current

IRI

Current sourced by pin 15

(PNP base)

Maximum guaranted error amplifier

output current

EAOI

Current sourced by pin 14

Current sunk by pin 14

Current sense input voltage gain

CSG

Pin 16

Max current sense input thres hold

voltage

MCEth

Pin 16

Current sense input bias current

ISI

Current sunk by pin 16

(NPN base )

Maxmum external power transistor on

time

Tonmax

% of H-period

@ f0=27kHz (16)

B+ output low level saturation voltage

B+OSV

V28 with I28=10mA

Internal reference voltage

IVREF

On error amp

(+) input for subaddress 0B

byte 1000000

Typ

85

6

0.2

3

1.2

1

100

0.25

4.8

Max

0.5

2

Unit

dB

MHz

µA

mA

mA

V

µA

%

V

V

14

Share Link: