K4E151612D-60JT Просмотр технического описания (PDF) - Samsung

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производитель

K4E151612D-60JT

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

Samsung 

K4E171611D, K4E151611D

K4E171612D, K4E151612D

WORD READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

DQ0 ~ DQ7

VI/OH -

VI/OL -

DQ8 ~ DQ15

VI/OH -

VI/OL -

tRWC

tRAS

tRP

tCRP

tRCD

tRSH

tCAS

tCRP

tRCD

tRAD

tASR tRAH

ROW

ADDR.

tASC tCAH

COLUMN

ADDRESS

tRSH

tCAS

tCSH

tAWD

tCWD

tRWD

tOEA

tRWL

tCWL

tWP

tOLZ

tCLZ

tCAC

tAA

tRAC

tOLZ

tCLZ

tCAC

tAA

tRAC

tOED

tOEZ

VALID

DATA-OUT

tOED

tOEZ

VALID

DATA-OUT

tDS tDH

VALID

DATA-IN

tDS tDH

VALID

DATA-IN

Don′t care

Undefined

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