TDA8042M Просмотр технического описания (PDF) - Philips Electronics
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TDA8042M Datasheet PDF : 16 Pages
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Philips Semiconductors
Quadrature demodulator
Product specification
TDA8042M
CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL(IQ) = 1 kΩ; measured in application circuit of Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply
VCC1
VCC2
ICC1
ICC2
AGC
GCR
GVAGC
RiVAGC
Vth
RiVTH
Idet
supply voltage
supply voltage
supply current
supply current
gain control range
voltage gain control at pin 3
input level = Vi(RF)min
input level = Vi(RF)max
input resistance at pin 3
AGC threshold voltage
Vo = 1.6 V (peak-to-peak value)
Vo = 0.8 V (peak-to-peak value)
Vo = 0.4 V (peak-to-peak value)
VTH input resistance
maximum AGC detector output current
(absolute value)
4.75 5.0 5.25 V
4.75 5.0 5.25 V
VCC1 = VCC2 = 5.0 V 41
51
61
mA
VCC1 = VCC2 = 5.0 V 13
16.5 20
mA
note 1
note 2
note 3
21
29
−
dB
0.5
−
3.5
−
−
20
2
V
4.5
V
−
kΩ
−
3.6
−
V
−
2.4
−
V
−
1.8
−
V
−
10
−
kΩ
−
1
−
mA
QPSK demodulator
fi(RF)
Ri(RF)
Xi(RF)
Vi(RF)
∆EΦ(I-Q)
RF input signal frequency
RF input impedance (resistive part)
RF input impedance (reactive part)
operating RF input level
phase matching error between I and Q
channels
350
fi(RF) = 480 MHz
−
fi(RF) = 480 MHz
−
note 1
57
note 4
−
∆EG(I-Q)
∆Gtilt
F
gain matching error between I and Q channels note 5
−
gain tilt error between I and Q channels
note 6
−
DSB noise figure
source
−
impedance = 50 Ω;
note 7
d3(IQ)
third-order intermodulation distortion in I and note 8
−
Q channels
−
650
50
−
19
−
−
78
0.7 2
0.15 0.8
0.3 0.5
13
17
50
−
MHz
Ω
Ω
dBµV
deg
dB
dB
dB
dB
1997 Apr 11
6
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