NX26F080A
NX26F160
AC ELECTRICAL CHARACTERISTICS
Symbol
tCP
tCL, tCH
tCR
tCF
tDS
tDH
tDV
tRESET
tRP
tWP
Description
5V (16 MHz)
Min Typ Max
SCK Serial Clock Period
62 — —
SCK Serial Clock High or Low Time
SCK Serial Clock Rise Time(1)
SCK Serial Clock Fall Time(1)
26 — —
—— 7
—— 7
SIO Setup Time to SCK Rising Edge
40 — —
SIO Hold Time From SCK Rising Edge
SIO Valid after SCK(2)
0 ——
— — 60
SCK Low Duration for
1—5
Valid Reset or Standby (See Figures 9 & 10)
Read Pre-data Delay (See Figure 9)
30 — —
Erase/Write Program Time(3)
NX26F080A — 3 5
(See Figure 10)
NX26F160 — 4 5.5
3V (8 MHz)
Min Typ Max
125 — —
57 — —
— —5
— —5
100 — —
0 ——
— — 115
2 — 10
100 — —
— 5 10
— 25 32
1 Unit
ns
ns
2 ns
ns
ns
ns
3 ns
µs
4 µs
ms
Notes:
5
1. Test points are 10% and 90% points for rise/fall times. All other timings are measured at the 50% point.
2. With 50 pF (8 MHz) or 30 pF (16 MHz) load SIO to GND.
3. The NX26F080A and NX26F160 are designed for Erase/Write endurances of 10K cycles. Endurance in the range of 100K
cycles can be obtained using ECC software methods like those provided in the SFK Serial Flash Development Kit.
6
7
CLOCK AND DATA TIMING
8
9
tCP
tCH
tCL
tCF
tCR
SCK
10
tDV
tDV
tDS
tDH
SIO
Read
Write
11
12
NexFlash Technologies, Inc.
11
PRELIMINARY NXSF006E-0801
08/22/01 ©