IS61NSCS25672 Просмотр технического описания (PDF) - Integrated Silicon Solution

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производитель

IS61NSCS25672

ΣRAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

Integrated Silicon Solution 

IS61NSCS25672

IS61NSCS51236

ISSI ®

INPUT AND OUTPUT LEAKAGE CHARACTERISTICS

Symbol

IIL

IINM

IOL

Parameter

Input Leakage Current

(except mode pins)

Mode Pin Input Current

Output Leakage Current

Test Conditions

VIN = 0 to VCC

VCC ≥ VIN ≥ VIL

0V ≤ VIN ≤ VIL

Output Disable,

VOUT = 0 to VCCQ

Min.

–2

–100

–2

–2

Max.

2

2

2

2

Units

µA

µA

µA

SELECTABLE IMPEDANCE OUTPUT DRIVER DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

VOHL(1)

Low Drive Output High Voltage

VOLL(1)

Low Drive Output Low Voltage

VOHH(2)

High Drive Output High Voltage

VOLH(2)

High Drive Output Low Voltage

Notes:

1. ZQ = 1; High Impedance output driver setting

2. ZQ = 0; Low Impedance output driver setting

Test Conditions

IOHL = –4 mA

IOLL = 4 mA

IOHH = –8 mA

IOLH = 8 mA

Min.

VCCQ – 0.4

—

VCCQ – 0.4

—

Max.

—

0.4

—

0.4

Units

V

V

V

V

OUTPUT RESISTANCE

Symbol

ROUT

Parameter

Output Resistance

Test Conditions

VOH, VOL = VCCQ/2

ZQ = VIL

VOH, VOL = VCCQ/2

ZQ = VIH

Min.

17

35

Typ.

25

50

Max.

33

65

Units

Ω

Ω

Integrated Silicon Solution, Inc. — 1-800-379-4774

19

ADVANCE INFORMATION Rev. 00A

06/19/01

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