IS61C64AL
ISSI ®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
ICC1
ICC2
Parameter
VDD Operating
Supply Current
VDD Dynamic Operating
Supply Current
ISB1
TTL Standby Current
(TTL Inputs)
ISB2
CMOS Standby
Current (CMOS Inputs)
Test Conditions
VDD = Max., CE = VIL
IOUT = 0 mA, f = 0
VDD = Max., CE = VIL
IOUT = 0 mA, f = fMAX
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Com.
Ind.
typ.(2)
Com.
Ind.
Com.
Ind.
typ.(2)
-10
Min. Max.
— 20
— 25
— 45
— 50
25
—1
—2
— 350
— 450
200
-12
Min. Max.
Unit
— 20
mA
— 25
— 35
mA
— 45
25
—1
mA
—2
— 350
µA
— 450
200
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5V, TA = 25oC. Not 100% tested.
CAPACITANCE(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
8
pF
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/16/06