IRFPS3815PBF Просмотр технического описания (PDF) - International Rectifier
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IRFPS3815PBF Datasheet PDF : 8 Pages
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IRFPS3815PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.015 Ω VGS = 10V, ID = 63A
3.0 ––– 5.0
47 ––– –––
V VDS = 10V, ID = 250µA
S VDS = 50V, ID = 58A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
––– 260 390
ID = 58A
––– 53 80 nC VDS = 120V
––– 150 230
VGS = 10V
––– 22 –––
VDD = 75V
––– 130 ––– ns ID = 58A
––– 51 –––
RG = 1.03Ω
––– 60 –––
VGS = 10V
Between lead,
D
––– 5.0 –––
6mm (0.25in.)
nH
from package
G
––– 13 –––
and center of die contact
S
––– 6810 –––
VGS = 0V
––– 1570 ––– pF VDS = 25V
––– 480 –––
ƒ = 1.0MHz, See Fig. 5
––– 9820 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 670 –––
––– 1270 –––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.96mH
RG = 25Ω, IAS = 58A. (See Figure 12)
ISD ≤ 58A, di/dt ≤ 450A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 105
A showing the
integral reverse
G
––– ––– 390
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V
––– 270 410 ns TJ = 25°C, IF = 58A
––– 2990 4490 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
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