RFP4N05 Просмотр технического описания (PDF) - Intersil
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RFP4N05 Datasheet PDF : 5 Pages
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RFP4N05, RFP4N06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP4N05
RFP4N06
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperat6ure for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
50
50
4
10
±20
25
0.2
-55 to 150
300
260
60
60
4
10
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0
RFP4N05
50
RFP4N06
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
60
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
2
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
IGSS VGS = ±20V, VDS = 0
-
rDS(ON) ID = 4A, VGS = 10V, (Figures 6, 7)
-
VDS(ON) ID = 4A, VGS = 10V
-
td(ON) ID ≈ 1A, VDD = 30V, RGS = 50Ω,
-
tr
RL = 29.2Ω, VGS = 10V,
(Figure 10)
-
td(OFF)
-
tf
-
CISS VGS = 0V, VDS = 25V
-
f = 1MHz, (Figure 9)
COSS
-
CRSS
-
RθJC
-
TYP MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
µA
-
25
µA
-
±100 nA
-
0.800
Ω
-
3.2
V
6
15
ns
14
30
ns
16
30
ns
14
25
ns
-
200
pF
-
85
pF
-
30
pF
-
5
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr
ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed test: width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
100
-
ns
4-524
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