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IKB03N120H2 Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon Technologies
IKB03N120H2 Datasheet PDF : 15 Pages
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IKP03N120H2,
IKW03N120H2
IKB03N120H2
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
Ω
,
C
r2)
=4nF
T
j
=25
°
C
T
j
=150
°
C
min.
Value
typ.
Unit
max.
mJ
-
0.05
-
-
0.09
-
Power Semiconductors
4
Rev. 2, Mar-04
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