K03H1202 Просмотр технического описания (PDF) - Infineon Technologies

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K03H1202

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

Figure A. Definition of switching times

Figure B. Definition of switching losses

IKA03N120H2

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

½ Lσ

öö

DUT

(Diode)

L

Cσ

Cr

VDC

RG

DUT

(IGBT)

½ Lσ

Figure E. Dynamic test circuit

Leakage inductance Lσ = 180nH,

Stray capacitor Cσ = 40pF,

Relief capacitor Cr = 4nF (only for

ZVT switching)

Power Semiconductors

13

Mar-04, Rev. 2

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