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Q67040-S4513

Low Loss IGBT in Trench and Fieldstop technology

Unspecified 

Preliminary

TrenchStoP Series

IGW08T120

Low Loss IGBT in Trench and Fieldstop technology

• Approx. 1.0V reduced VCE(sat) compared to BUP305D

• Short circuit withstand time – 10µs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

C

G

E

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

VCE

IC

VCE(sat),Tj=25°C

IGW08T120

1200V

8A

1.7V

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 1200V, Tj ≤ 150°C

Diode forward current

TC = 25°C

TC = 100°C

Gate-emitter voltage

Short circuit withstand time1)

VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Tj,max

150°C

Package

TO-247AC

Ordering Code

Q67040-S4513

Symbol

VCE

IC

ICpuls

-

IF

VGE

tSC

Ptot

Tj

Tstg

-

Value

Unit

1200

V

A

16

8

24

24

16

8

±20

V

10

µs

70

W

-40...+150

°C

-55...+150

260

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Preliminary / Rev. 1 Sep-03

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