IXZ4DF18N50 Просмотр технического описания (PDF) - IXYS CORPORATION

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Компоненты Описание

производитель

IXZ4DF18N50

RF Power MOSFET & DRIVER

IXYS CORPORATION 

Fig. 14

VCCIN Supply Current vs . Frequency

Driver Section

10

20V

1

15V

8V

0.1

0.01

0.001

0

10

20

30

40

50

Frequency (MHz)

IXZ4DF18N50

RF Power MOSFET & DRIVER

Test Circuit

Fig. 15

4.7UF

0.01u 0.01u 0.01u 0.01u 0.47u 0.47u

VCC

4.7UF

VCC

DGND

INVCC

IN

IN

INGND

VCC

L1

CM Choke

4.7UF 0.01u 0.01u 0.01u 0.01u

DGND

VCC

++

4.7UF

0.47u 0.47u

Source

VDD

10UF 100V

Drain

5 ohm 20W

Source

.01uF

Place all capacitors on VCC as

close to the VCC lead as possible

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