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Номер в каталоге
Компоненты Описание
HSB278S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HSB278S
Silicon Schottky Barrier Diode for High Speed Switching
Hitachi -> Renesas Electronics
HSB278S Datasheet PDF : 5 Pages
1
2
3
4
5
Main Characteristic
10
1
10
0
10
−
1
10
−
2
Ta = 75
°
C
10
−
3
Ta = 25
°
C
10
−
4
10
−
5
10
−
6
10
−
7
10
−
8
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V
F
(V)
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
HSB278S
10
−
4
10
−
5
Ta = 75
°
C
10
−
6
10
−
7
Ta = 25
°
C
10
−
8
0
10
20
30
40
Reverse voltage V
R
(V)
Fig.2 Reverse current Vs. Reverse voltage
1.0
0.1
0.1
1.0
10
Reverse voltage V
R
(V)
Fig.3 Capacitance Vs. Reverse voltage
3
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