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HIN205CP-T Просмотр технического описания (PDF) - Intersil

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HIN205CP-T Datasheet PDF : 13 Pages
First Prev 11 12 13
HIN201 thru HIN213
Die Characteristics
DIE DIMENSIONS:
160 mils x 140 mils
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
SUBSTRATE POTENTIAL
V+
Metallization Mask Layout
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
TRANSISTOR COUNT:
238
PROCESS:
CMOS Metal Gate
HIN211
SHD
EN
R4IN
R4OUT T4IN T3IN R5OUT
R5IN
R3OUT
V-
C2-
R3IN
T4OUT
C2+
T3OUT
C1-
T1OUT
T2OUT
V+
C1+
R2IN
R2OUT T2IN T1IN R1OUT
R1IN GND
VCC
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
3-13

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