HE8550(2014) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

HE8550
(Rev.:2014)

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

Unisonic Technologies 

HE8550

 TYPICAL CHARACTERISTICS

Static Characteristics

-0.5

-0.4

-0.3

-0.2

-0.1

IB=-3.0mA

IB=-2.5mA

IB=-2.0mA

IB=-1.5mA

IB=-1.0mA

IB=-0.5mA

0-0 -0.4 -0.8 -1.2 -1.6 -2.0

Collector-Emitter Voltage ( V)

Base-Emitter on Voltage

-103

-102

VCE=-1V

-101

-100

0

-0.2 -0.4 -0.6 -0.8 -1.0

Base-Emitter Voltage (V)

Current Gain-Bandwidth Product

103

VCE=-10V

102

101

100

-100

-101

-102

-103

Collector Current, IC (mA)

PNP SILICON TRANSISTOR

DC Current Gain

103

VCE=-1V

102

101

100-10-1

-100

-101

-102 -103

Collector Current, IC (mA)

Saturation Voltage

-104

IC=10*IB

-103

VBE(SAT)

-102

VCE(SAT)

-101

-10-1

-100

-101

-102 -103

Collector Current, IC (mA)

Collector Output Capacitance

103 f=1MHz

IE=0

102

101

100

-100

-101

-102

-103

Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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