LAE4002S Просмотр технического описания (PDF) - Philips Electronics
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LAE4002S Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LAE4002S
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
thermal resistance from junction to case
CONDITIONS
Tj = 75 °C
MAX.
200
UNIT
K/W
CHARACTERISTICS
Tcase = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICER
IEBO
Ccb
Cce
Ceb
sfe2
GAM
hFE
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base capacitance
collector-base capacitance
collector-base capacitance
forward power gain
maximum available gain
DC current gain
VCB = 20 V; IE = 0
VCB = 40 V; IE = 0
VCB = 35 V; RBE = 220 Ω
IC = 0 V; VEB = 1.5 V
IE = IC = 0; VCB = 18 V; VEB = 1.5 V;
f = 1 MHz
IE = IC = 0; VCE = 18 V; VEB = 1.5 V;
f = 1 MHz
IE = IC = 0; VEB = 1.0 V; VCB = 18 V;
f = 1 MHz
IC = 30 mA; VCE = 18 V; f = 2 GHz
IC = 30 mA; VCE = 18 V; f = 4 GHz
IC = 30 mA; VCE = 18 V; f = 2 GHz
IC = 30 mA; VCE = 18 V; f = 3 GHz
VCE = 5 V; IC = 30 mA
MIN.
−
−
−
−
−
TYP.
−
−
−
−
0.3
MAX. UNIT
100 nA
150 µA
500 µA
50
nA
−
pF
−
0.55 −
pF
−
1.8 −
pF
−
8.8 −
dB
−
2.8 −
dB
−
14
−
dB
−
11
−
dB
15
−
150
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
4
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