LAE4002S Просмотр технического описания (PDF) - Philips Electronics
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LAE4002S Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LAE4002S
FEATURES
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold
sandwich metallization
• Optimum temperature profile
• Excellent performance and reliability.
PINNING - SOT100
PIN
1 collector
2 emitter
3 base
4 emitter
DESCRIPTION
APPLICATIONS
Common emitter class A linear power amplifiers up to
4 GHz.
handbook, halfpage
3
DESCRIPTION
2
NPN silicon planar epitaxial microwave power transistor in
a SOT100 metal ceramic package with emitter connected
to the metallized lid. A miniature ceramic encapsulation is
used for compatibility with stripline microwave circuits.
c
4
b
e
1
MAM312
Marking code: R9.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance up to Tcase = 25 °C in a common emitter class A circuit.
MODE OF
OPERATION
f
VCE
(GHz)
(V)
IC
(mA)
PL1
(mW)
CW linear amplifier
4
18
30
>126
Gpo
(dB)
>7.5
Zi
(Ω)
typ. 4 + j23
ZL
(Ω)
typ. 6.5 + j32
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
2
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