HAL1820UA-A Просмотр технического описания (PDF) - Micronas
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HAL1820UA-A Datasheet PDF : 25 Pages
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HAL 1820
DATA SHEET
3.6. Characteristics
at TJ = 40 °C to +170 °C (for temperature type A), VSUP = 4.5 V to 5.5 V, GND = 0 V, after programming the sensor
and locking the EEPROM,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol Parameter
Pin No. Min. Typ. Max. Unit Conditions
ISUP
Supply Current
1
over Temperature Range
7
10
mA
Resolution
3
10
Bit
INL
Non-Linearity of Output
3
1.0 0
1.0
%
% of supply voltage1)
Voltage over Temperature
ER
VOUTH
VOUTL
tr(O)
Ratiometric Error of Output 3
over Temperature
(Error in VOUT / VSUP)
Output High Voltage
3
Output Low Voltage
3
Response Time of Output3) 3
tPOD
Power-Up Time (Time to
reach stabilized Output
Voltage)3)
1.0 0
1.0
%
4.7
4.9
V
0.1
0.3
V
VSUP = 5 V, IOUT = +/ 1 mA2)
VSUP = 5 V, IOUT = +/ 1 mA2)
0.5
1
ms
CL = 10 nF, time from 10% to
90% of final output voltage for a
step like
signal Bstep from 0 mT to Bmax
1
1.5
ms
CL = 10 nF, 90% of VOUT
BW
VOUTn
ROUT
Small Signal Bandwidth ( 3
3 dB)3)
Output RMS Noise3)
3
Output Resistance over
3
Recommended Operating
Range3)
2.25 2.5
2.6
5
60
kHz BAC < 10 mT
mV
B = 5% to 95% of Bmax
VOUTLmax VOUT VOUTHmin
VPORLH
Power-On Reset Level from 1
VSUPLow to VSUPHigh
VPORHL
Power-On Reset Level from 1
VSUPHighto VSUPLow
VPORHYS Power-On Reset Hysteresis 1
VDIAG
Output Voltage in case of
3
Error Detection
3.9
4.35 4.5
V
3.8
4.2
4.4
V
0.1
0.175 0.3
V
0
300 mV
TO92UA Package
Thermal Resistance
Rthja
Rthjc
junction to air
junction to case
SOT89B Package
Measured with a 1s0p board
250 K/W
70
K/W
Rthja
Rthjc
Thermal Resistance
junction to air
junction to case
Measured with a 1s0p board
210
K/W
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
60
K/W
1)If more than 50% of the selected magnetic field range are used and VOUT is between 0.3 V and 4.7 V
2) Linear output range
3) Guaranteed by design
18
July 3, 2013; DSH000158_003EN
Micronas
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