GT15J121 Просмотр технического описания (PDF) - Toshiba

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GT15J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

Toshiba 

TOSHIBA

GT15J121

Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

GT15J121

High Power Switching Applications

Fast Switching Applications

●　 The 4th generation

●　 Enhancement-mode

●　 Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference)

●　 High speed

:tr=0.03μs(typ.)

:tf=0.08μs(typ.)

●　 Low switching loss

:Eon=0.23mJ(typ.)

:Eoff=0.18mJ(typ.)

Maximum Ratings (Ta=25℃)

Characteristic

Symbol Ratings

Unit

Collector-emitter voltage

VCES

600

V

Gate-emitter voltage

VGES

±20

V

Collector current

DC

IC

15

A

1ms

ICP

45

Collector power dissipation

(Tc=25℃)

PC

35

W

Junction temperature

Storage temperature range

Tj

150

℃

Tstg -55～150

℃

2001-7- 1/2

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