GS881E18BD-150IV Просмотр технического описания (PDF) - Giga Semiconductor

Номер в каталоге

Компоненты Описание

производитель

GS881E18BD-150IV

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

Pipeline Mode Timing (DCD)

GS881E18/32/36B(T/D)-xxxV

Begin Read A Cont

CK

Deselect Deselect Write B

tKL

tKH

tKC

Read C

Read C+1 Read C+2 Read C+3 Cont

ADSP

ADSC

ADV

Ao–An

GW

BW

Ba–Bd

E1

E2

E3

tS

tH

tS

tS

tH

A

tS

tS

tS

tH

tS

tH

tS

tH

ADSC initiated read

tH

B

C

tH

tH

tS

E2 and E3 only sampled with ADSC

G

DQa–DQd Hi-Z

tOE

tOHZ

Q(A)

tS

tH

D(B)

tKQ

tLZ

Q(C)

Q(C+1)

Q(C+2)

Deselect Deselect

Deselected with E1

Q(C+3)

tHZ

tKQX

Rev: 1.00 6/2006

21/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2006, GSI Technology

Share Link: