FQP6N90C Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQP6N90C Datasheet PDF : 10 Pages
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Top : 15.V0GVS
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4.5
4.0
3.5
VGS = 10V
3.0
VGS = 20V
2.5
2.0
※ Note : TJ = 25℃
1.5
0
3
6
9
12
15
18
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
500
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
V25D0S μ=
50V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0S μ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 180V
10
VDS = 450V
VDS = 720V
8
6
4
2
※ Note : ID = 6A
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2006 Fairchild Semiconductor Corporation
3
FQP6N90C / FQPF6N90C Rev. C1
www.fairchildsemi.com
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