FDS4897C Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS4897C Datasheet PDF : 9 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Drain-Source Avalanche Ratings (Note 3)
EAS
Drain-Source Avalanche
VDD = 40 V, ID = 7.3 A, L = 1 mH Q1
Energy (Single Pulse)
VDD = –40 V, ID =–8.7 A, L = 1 mH Q2
IAS
Drain-Source Avalanche
Q1
Current
Q2
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
ΔBVDSS
ΔTJ
IDSS
IGSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
VGS = 0 V,
ID = 250 μA
Q1
VGS = 0 V,
ID = –250 μA
Q2
ID = 250 μA, Referenced to 25°C
Q1
ID = –250 µA, Referenced to 25°C Q2
VDS = 32 V,
VGS = 0 V
Q1
VDS = –32 V, VGS = 0 V
Q2
VGS = ±20 V, VDS = 0 V
All
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 μA
Q1
VDS = VGS,
ID = –250 µA
Q2
ΔVGS(th)
Gate Threshold Voltage
ID = 250 μA, Referenced to 25°C
Q1
ΔTJ
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
Q2
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 6.2 A
Q1
VGS = 4.5 V,
ID = 4.8 A
VGS = 10 V, ID = 6.2 A, TJ = 125°C
VGS = –10 V,
ID = –4.4 A
Q2
VGS = –4.5 V, ID = –3.8 A
VGS = –10 V, ID = –4.4 A, TJ = 125°C
gFS
Forward Transconductance VDS = 10 V,
ID = 6.2 A
Q1
VDS = –10 V,
ID =–4.4 A
Q2
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
RG
Gate Resistance
Q1
Q1
VDS = 20 V, VGS = 0 V, f = 1.0 MHz
Q2
Q1
Q2
Q2
VDS = –20 V, VGS = 0 V, f = 1.0 MHz Q1
Q2
f = 1.0 MHz
Q1
Q2
27
mJ
38
mJ
7.3
A
–8.7
40
V
–40
34
mV/°C
–40
1
μA
–1
±100 nA
1 1.9 3
V
–1 –1.7 –3
–5
mV/°C
4
21 29 mΩ
26 36
29 43
37 46
50 63
55 73
21
S
12
760
pF
1050
100
pF
140
60
pF
70
1.2
Ω
9
FDS4897C Rev C(W)
www.fairchildsemi.com
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