FDS5682 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS5682 Datasheet PDF : 12 Pages
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August 2005
FDS5682
N-Channel PowerTrench® MOSFET
60V, 7.5A, 21mΩ
Features
rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A
rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2005 Fairchild Semiconductor Corporation
1
FDS5682 Rev. A
www.fairchildsemi.com
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