July 2005
FDS5672
N-Channel PowerTrench® MOSFET
60V, 12A, 10mΩ
Features
rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
1
www.fairchildsemi.com