FDG6302 Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

FDG6302

Dual P-Channel, Digital FET

Fairchild Semiconductor 

Typical Electrical Characteristics

0.2

0.15

0.1

0.05

VGS = -4.5V

-3.5V

-3.0V

-2.7V

-2.5V

-2.0V

0

0

1

2

3

4

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

1.6

ID = -0.14A

1.4 V GS = -4.5V

1.2

1

0.8

0.6

-50 -25

0

25

50

75 100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

with Temperature.

0.14

VDS = -5.0V

0.12

0.1

TA = -55°C 25°C

125°C

0.08

0.06

0.04

0.02

0

0

1

2

3

4

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2.5

VGS = -2.0V

2

1.5

1

-2.5V

-2.7V

-3.0V

-3.5V

-4.0V

-4.5V

0.5

0

0.05

0.1

0.15

0.2

-ID, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

25

ID = -0.07A

20

15

TA = 125°C

10

5

TA = 25°C

0

1.5

2

2.5

3

3.5

4

4.5

5

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.3

VGS= 0V

0.1

0.01

TA = 125°C

25°C

-55°C

0.001

0.0001

0.2

0.4

0.6

0.8

1

1.2

-VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDG6302P Rev.F

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