DTC123EET1G Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

DTC123EET1G

Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ

ON Semiconductor 

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3

Table 1. ORDERING INFORMATION

Device

Part Marking

Package

Shipping†

MUN2231T1G

8H

SC−59

3000 / Tape & Reel

(Pb−Free)

MMUN2231LT1G, NSVMMUN2231LT1G*

A8H

SOT−23

(Pb−Free)

3000 / Tape & Reel

MUN5231T1G

8H

SC−70/SOT−323

3000 / Tape & Reel

(Pb−Free)

DTC123EET1G

8H

SC−75

3000 / Tape & Reel

(Pb−Free)

DTC123EM3T5G, NSVDTC123EM3T5G*

8H

SOT−723

(Pb−Free)

8000 / Tape & Reel

NSBC123EF3T5G

E (180°)**

SOT−1123

(Pb−Free)

8000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP

Capable.

** (xx°) = Degree rotation in the clockwise direction.

300

250

200

(1) (2) (3) (4) (5)

150

100

(1) SC−75 and SC−70/SOT323; Minimum Pad

(2) SC−59; Minimum Pad

(3) SOT−23; Minimum Pad

(4) SOT−1123; 100 mm2, 1 oz. copper trace

(5) SOT−723; Minimum Pad

50

0

−50 −25

0 25 50 75 100 125 150

AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

www.onsemi.com

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