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DS2229 Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated
Номер в каталоге
Компоненты Описание
производитель
DS2229
Word-Wide 8 Meg SRAM Stik
Dallas Semiconductor -> Maxim Integrated
DS2229 Datasheet PDF : 10 Pages
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LOW VCC DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
V
CC
for Data Retention
V
DR
2.0
-
-
V
Data Retention Current
I
CCDR
-
1
8
µ
A
Chip Deselect to Data
t
CDR
Retention Time
Operation Recovery Time
t
R
0
-
-
ns
5
-
-
ms
DS2229
(t
A
= 0
°
C to 70
°
C)
TEST CONTIDION
CE0
-
CE3
≥
V
CC
-0.2V,
CS
≥
V
CC
-0.2V or 0V
≤
CS
≤
0.2V V
IN
≥
0V
V
CC
= 3.0V, V
IN
≥
0V
CE0
-
CE3
≥
V
CC
-0.2V,
CS
≥
V
CC
-0.2V or 0V
≤
CS
≤
0.2V t
A
=25°C
See Retention
Waveform
LOW V
CC
DATA RETENTION TIMING WAVEFORM (1)
(
CE0
-
CE3
Controlled)
Figure 3
SEE NOTE 5
LOW V
CC
DATA RETENTION TIMING WAVEFORM (2)
(CS Controlled) Figure 4
SEE NOTE 5
5 of 10
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